Navitas Pioneers GaN Integration as the Key to High Efficiency and High Density Power Electronics
EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today that Dr. Nick Fichtenbaum, Co-Founder and Vice-President of Engineering, will deliver a keynote address on GaN power ICs at the 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2017) in Albuquerque, NM, USA. Dr. Fichtenbaum will present “GaN Power ICs: Device Integration Delivers Application Performance” on November 1st, 2017.
In addition, Dr. Fichtenbaum will provide real-world insights in a panel discussion titled, “Commercialization of GaN Devices in High-Frequency Power Electronic Applications” on October 31st at the same conference.
“WiPDA is an influential forum as it brings together many of the best minds in power devices,” said Dr. Fichtenbaum, a leading industry technologist that has been pioneering GaN materials and devices for nearly 15 years. “It is a great honor to present the latest in GaN technology including advances in the monolithic integration of analog, digital and power circuits all in GaN to solve fundamental challenges in high-speed, high density applications. This is an exciting and fast developing field”.
Dr. Fichtenbaum will deliver the keynote at 8:30 a.m. on November 1st at the Hyatt Regency Tamaya Resort. The panel discussion begins at 10:30 a.m. on October 31st.
“As the world’s first and only GaN Power IC company, Navitas has developed high-performance, easy-to-use GaN power ICs for next-generation applications in advanced mobile, industrial and consumer markets,” said Stephen Oliver, Vice-President of Sales and Marketing at Navitas. “Dr. Fichtenbaum’s presentation highlights advanced research, practical development and real-world commercial implementation of this new GaN material. We look forward to discussing these GaN innovations as GaN adoption accelerates throughout the power industry.”
Last month, Navitas introduced the world’s smallest 65W USB-PD laptop adapter reference design in support of the dramatic size and weight reductions driven by market demand. The NVE028A utilizes Navitas high-frequency, high-efficiency AllGaN™ GaN Power ICs to deliver 65W in a package up to 5 times smaller and lighter than traditional silicon-based designs. Since introducing the AllGaN platform at APEC’16, Navitas has announced single and half-bridge GaN Power ICs, plus the world’s smallest 150W adapter.
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2013 and based in El Segundo, CA, USA. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 30 Navitas patents are granted or pending.
WiPDA 2017 (Workshop on Wide Bandgap Power Devices and Applications) is sponsored by IEEE Power Electronics and Electron Devices Societies and the Power Source Manufacturers Association (PSMA). WiPDA provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, development experience, and application knowledge. The 2017 workshop, at the Hyatt Regency Tamaya Resort, Albuquerque, NM, is in conjunction with Sandia National Laboratories.
Navitas Semiconductor and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Navitas Semiconductor Inc.
Stephen Oliver, +1 ThinkGaNIC (+1 844-654-2642)
VP, Sales & Marketing