In power conversion, fast switching combined with high efficiency enables small size, low weight and lower system cost. The world’s first GaN Power ICs deliver high frequency and high efficiency simultaneously … enabling a high-speed revolution in power electronics.
Monolithically-integrated GaN Power ICs using Navitas’ proprietary iDrive™ provide extreme semiconductor performance in easy-to-use, “digital in, power out” circuit building blocks.
Navitas’ GaN is a new ‘wide band gap’ semiconductor material with 100x faster switching and 20x improved performance than Silicon (Si). Navitas’ AllGaN™ process design kit uses GaN’s lateral structure to enable the monolithic integration of power FETs, drivers and logic into a single IC.
Integration is key to minimize delays and eliminate parasitic inductances that have restricted the switching speed of Si and earlier discrete GaN circuits. With propagation delays down to 5 ns, and robust dV/dt up to 200 V/ns, traditional 65-100 kHz converter designs can be accelerated to MHz and beyond. Navitas iDrive virtually eliminates all frequency-related losses making a 10-100x increase in switching frequencies a commercial reality.
GaN Power ICs with iDrive are the ultimate in circuit design simplicity. Direct connection between the control IC’s digital PWM output and the iDrive input, with precise internal voltage regulation and no parasitic path to the GaN FET gate, ensures a simple, minimal component count, rugged solution.
Switching waveforms exhibit a true “text book” feeling with very clean rising and falling edges and no ringing. Integration eliminates gate overshoot and undershoot, while zero inductance on-chip insures no turn-off loss. This lack of ringing or overshoot makes tight control of deadtime easy in half-bridge circuits.
Digital input means flexibility in design, with options for the GaN Power ICs to be placed on the main board or daughtercard, close to or far from the control IC. Features like programmable dV/dt and UVLO ensure maximum flexibility, with confidence.
Unlike most Si and earlier discrete GaN devices, Navitas GaN Power ICs are provided in very small, low profile, surface mount 5×6 and 6×8 mm QFN packages eliminating speed-limiting, lossy discrete drive and protection circuits, and shrinking PCB area.
High speed, high efficiency power conversion using GaN Power ICs means shrinking magnetics and heatsinks. This higher power density (W/in3) means smaller power converters or more power in the same size case. For consumers this means a single, small, light travel adapter that can deliver faster charging to laptops, tablets, smartphones or wearable devices.
Navitas GaN Power ICs are created on 6” eMode GaN-on-Si wafers and assembled using standard SMT QFN packages in world-class facilities to deliver high performance with high volume, high quality and low cost.
With high-frequency, high efficiency designs, the magnetics, PCBs, heatsinks and cases all shrink, minimizing Bill Of Material (BOM) costs. Integrated, easy-to-use iDrive GaN Power ICs minimize complexity, component count and time to market and maximize ‘first pass success’ and market share.