Navitas Semiconductor today announced the availability of a 150W AC-DC reference design utilizing the company’s industry-leading GaN power ICs.
Navitas CTO Presents Leading GaN Power IC Innovations at Prestigious Power Electronics Event in Japan
Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe, in Nuremberg, Germany, May 16th -18th, 2017.
EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor today announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC.
EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology.
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power…