Navitas Semiconductor today announced its participation in China’s annual multi-city power conference “Power 2017”, where new GaN Power IC applications for advanced mobile, industrial and consumer markets will be unveiled.
Navitas Selected by the US DoE PowerAmerica Institute to Enable Next Generation Mobile Fast Chargers
Navitas Semiconductor today announced that the US Department of Energy’s PowerAmerica Institute has selected Navitas to enable a new class of high-efficiency, high-density, mobile fast chargers.
Navitas Semiconductor today announced it has expanded its support in Asia by entering into two new distribution partnerships for its groundbreaking Gallium Nitride (GaN) power ICs.
Navitas Semiconductor today announced the availability of a 150W AC-DC reference design utilizing the company’s industry-leading GaN power ICs.
Navitas CTO Presents Leading GaN Power IC Innovations at Prestigious Power Electronics Event in Japan
Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe, in Nuremberg, Germany, May 16th -18th, 2017.
Navitas at the leading edge of “U.S. Power Electronics Technology and Manufacturing Roadmap”, by PEIC, submitted to National Institute of Science and Technology (NIST). Part of a 2-year project entitled…