Latest News
Navitas to Participate at Upcoming Investor Conferences
Torrance, Calif., May 07, 2026 - Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Chris Allexandre, CEO, and Tonya Stevens, CFO,...
Navitas Semiconductor Announces First Quarter 2026 Financial Results
Revenue grew 18% sequentially with expanded gross margin, driven by increased contribution from high-power markets, including AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification High-power markets represented a large...
Navitas Semiconductor Appoints Davin Lee as Independent Director to its Board
Lee Brings Over 30 Years of Semiconductor and Power Management Experience as Navitas Continues its Strategic Pivot to High-Power Markets TORRANCE, Calif., May 4, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium...
Navitas Semiconductor to Report Q1 2026 Financial Results on Tuesday, May 5, 2026
TORRANCE, Calif., April 16, 2026 – Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report first quarter 2026 financial results on Tuesday, May 5, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and CFO, Tonya Stevens, will...
Navitas Semiconductor Appoints Gregory M. Fischer as Independent Director to its Board
Ex-Broadcom Executive Brings Over 40 Years of Semiconductor Technology and Business Leadership Experience to Navitas’ Board as Part of Strategic Transformation to High-Power Markets TORRANCE, Calif., April 13, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry...
APEC 2026: Navitas CEO Weighs In On the Future of AI Power
"Power Electronics News (PEN) Editor-in-Chief, Aalyia Shaukat, interviews Navitas CEO, Chris Allexandre, during APEC 2026 in San Antonio, Texas. The discussion centers around the company’s latest GaN and SiC innovations targeting AI data centers and energy...
Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026
The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, cost, and compute density. The platform is being showcased at NVIDIA GTC 2026. TORRANCE, CA – March 16th,...
Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer
Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy, Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets TORRANCE, Calif., Mar. 11, 2026 – Navitas...
Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology
QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage...
Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation
First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers. Torrance, CA and Lausanne, Switzerland– March 4th 2026...
Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026
TORRANCE, Calif., Feb. 25, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley...
Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results
Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion...
Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification. TORRANCE, CA –...
Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers
Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, CA – February, 9th, 2026 — Navitas...
Navitas Semiconductor to Report Q4 and Full Year 2025 Financial Results
TORRANCE, Calif., Jan. 28, 2026 – Navitas Semiconductor, (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and...
Navitas to Present at the Needham Growth Conference on January 14, 2026
TORRANCE, Calif. , Jan. 7, 2026 – Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the 28th Annual Needham Growth...