GaN integration enables a new class of faster-charging, smaller, lighter power systems
EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today that Peter Huang,
Director Field Application & Technical Marketing, will deliver a keynote presentation titled, “GaN Power ICs Enable Next Generation Power Adaptor Design” at the Micro Electronics 2018 Power Design and Power Components Technology Forum, in Taipei on January 30th 2018. Huang will share new insights on how the industry’s first and only Gallium Nitride (GaN) power ICs create dramatic increases in speed, efficiency and densities for a broad range of power systems. Navitas is the silver sponsor of the conference, which presents an interactive forum for innovative manufacturers, partners, and customers to share expertise in accelerating adoption of new GaN and SiC devices.
“After 40 years of slow, inefficient silicon devices, the power electronics industry is entering an exciting era of new materials, new devices, new magnetics, new controllers and imaginative topologies”, said Huang. “Navitas looks forward to demonstrating how monolithic integration of power, drive and logic – all in GaN – leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications”.
The conference will be held at the GIS TAIPEI TECH Convention Center, Taipei on January 30th, 2018 from 13.00 to 17.10 pm. Organized by Micro Electronics http://www.mem.com.tw/meeting_arti.php?sn=1712190001
To request a meeting at the conference, please contact [email protected] or call +1 ThinkGaNIC (+1 844-654-2642).
Images From The Event
About Navitas
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2013 and based in El Segundo, CA, USA. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 30 Navitas patents are granted or pending.
Navitas Semiconductor, Navitas logo, and AllGaN are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Press Contact
Navitas Semiconductor Inc.
Peter Huang – Director Field Applications, Technical Marketing
Phone: +1 ThinkGaNIC (+1 844-654-2642)
Email: [email protected]
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