Navitas Semiconductor today announced the availability of a 150W AC-DC reference design utilizing the company’s industry-leading GaN power ICs.
Navitas CTO Presents Leading GaN Power IC Innovations at Prestigious Power Electronics Event in Japan
Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe, in Nuremberg, Germany, May 16th -18th, 2017.
加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas (音译:纳薇)半导体今天宣布重大技术突破，推出业界首个集成半桥氮化镓(GaN)功率IC。半桥电路是电力电子行业的重要基础，可以广泛应用到智能手机和笔记本充电器，电视，太阳能电池板，数据中心和电动汽车。
EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor today announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC.
EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology.
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power…
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg “Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead.” Press Release • Conference Details • Presentation