EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor today announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC.
EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology.
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power…
First public announcement of AllGaN platform. Press Release • APEC keynote • IEEE TV